Abstract

Zinc implantations in the MeV energy regime at temperatures of about 200°C within the dose range of 5 × 10 14–1 × 10 16 cm −2 were carried out. The investigations included RBS and PIXE measurements combined with ion channeling in the major crystallographic axes and additionally SNMS and XTEM. The implantation-induced damage is characterized by mobile point defects at the elevated implantation temperature. This results in damaged layers containing point-like defects, but far from amorphization. During rapid thermal annealing the surface up to about 0.6 R p recovered channeling-perfect, while in a depth of (1–2) R p a band of extrinsic dislocation loops was formed. Comparing the experimental with the calculated PIXE minimum yields, conclusions about the zinc positions were drawn: Due to the low ZnK aligned yield nearly all zinc atoms occupy substitutional lattice sites in the as-implanted samples. After annealing a remarkable diffusion of zinc combined with lattice site changes is observed.

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