Abstract
The interfaces between materials are often rich in physical phenomena such as emergent magnetic properties. A new study analyzes the low-temperature properties of the interface between two oxides controlled by cationic defect formation.
Highlights
The electron system emerging at interfaces between polar and nonpolar oxides [1,2,3] shows fascinating properties such as metallicity [1], superconductivity [4], strong electron correlations, and magnetic ordering [5,6,7,8,9,10]
We find that these transport parameters scale systematically with growth parameters providing important information about the ionic defect structure established during growth
At temperatures ≲30 K, Hall measurements reveal the typical nonlinear field dependence of the Hall resistance frequently observed in complex oxide heterostructures
Summary
Geballe Laboratory for Advanced Materials, Department of Applied Physics, Stanford University, Stanford, California 94305, USA. Geballe Laboratory for Advanced Materials, Department of Applied Physics, Stanford University, Stanford, California 94305, USA; and Photon Factory, High Energy Accelerator Research Organization (KEK), Tsukuba 305-0801, Japan. In addition to multiple electron transport, interfacial magnetism is tracked exploiting the anomalous Hall effect (AHE). These two properties both contribute to a nonlinearity in the field dependence of the Hall resistance, with multiple carrier conduction evident below 30 K and AHE at temperatures ≲10 K. The most pronounced AHE is found at increased growth pressure and, in the most defective, low-mobility samples, indicating a correlation between transport, magnetism, and cation defect concentration
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