Abstract
Transmission Electron Microscopy (TEM) was used to investigate microstructure of 6HSiC implanted with aluminum ions at temperatures of 1400–1600°C after annealing at 1800°C for 5 s. The formation of aluminum precipitates (up to 40 nm in size) and stacking faults were found to be the main defects observed in a damage layer developed in 6HSiC when implanted at high temperatures. The atomic structure of the defects were studied by high resolution electron microscopy (HREM). It was established that aluminum precipitates have (111) Al//(0001) 6HSiC; (110) Al//( 2 110) 6HSiC orientation relationships with the matrix. The stacking faults having ABCACBA BCB ACBABC stacking sequence were found to originate at the precipitate/matrix interface and terminate in the matrix by the formation of partial dislocations.
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