Abstract
Cluster ion implantation using decaborane (B 10H 14) has been proposed as a shallow implantation technique for LSI devices with gate lengths of several-tens nanometers. Experiments and computer simulations of low-energy boron monomers and decaborane clusters implantation were performed. Molecular dynamics simulations of B 10 cluster implantation have shown similar implant depth but different damage density and damage structure compared to monomer (B 1) ion implantation with the same energy-per-atom. For monomer implantation, point-defects such as vacancy–interstitial pairs are mainly formed. On the other hand, B 10 generates large numbers of defects within a highly-amorphised region at the impact location. This difference in damage structure produced during implantation is expected to cause different annihilation processes.
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