Abstract
A study was made of the radiation-induced defects annealing in the UO 2-SiO 2 system for 20–60 mol% UO 2. It was found that more than 30% of defects remain after athermal recombination and the remaining defects anneal by a thermally activated processes at temperatures up to about 750 °C, with an activation energy of about 3 eV. The defects formed in UO 2 crystallites and in SiO 2 containing dissolved UO 2 are most probably oxygen vacancies and molecular oxygen respectively. In SiO 2 containing dissolved UO 2, besides these defects there appear unbonded U atoms and also atoms resulting from stopping of fission fragments.
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