Defect and doping concentration study with series and shunt resistance influence on graphene modified perovskite solar cell: A numerical investigation in SCAPS-1D framework

Abstract

Perovskite solar cells (PSCs) have the potential to be highly efficient, low-cost next-generation solar cells. By raising open circuit voltage (Voc), the interfacial recombination kinetics can further improve device performance. In this study, we used simulation concept to elucidate the influence of using graphene as a surface passivation material in perovskite solar cells. Graphene works well as an interlayer to promote hole extraction and reduce interfacial recombination. In order to evaluate the effect of graphene in PSCs, the simulation was done in the SCAPS-1D framework to compare the performance of a device with and without graphene. Three interface layers were included to the model: TiO2/MAPbI3, MAPbI3/Graphene, and Graphene/Spiro-OMeTAD, in order to account for the impacts of interface defect density on device performance. The impacts of absorber doping concentration, absorber defect density, ETL doping concentration, HTL doping concentration, series resistance, and shunt resistance were also evaluated for the modelled PSC. Without any optimization, the control device with power conversion efficiency (PCE) of 20.677% was outperformed by the graphene-modified device with PCE of 20.911%. This difference is mostly due to the lower recombination losses and more effective suppression of interfacial non-radiative recombination. With optimization, the modified graphene-based device has a PCE of 26.667%. This result shows an enhancement of ∼1.28 times over that of the pristine graphene-based device. The outcomes have opened the way for the development of cost-effective and comparable state-of-the-art, high-efficiency perovskite solar cells with graphene interlayer by eliminating defects and managing non-radiative recombination.