Abstract
The model of axial dechanneling derived by some of us provides a uniform description of all dechanneling processes in crystals with defects and is the basis for some improvements in the quantitative defect analysis from Rutherford backscattering data. This description is applied to the analysis of defects in both implanted and annealed and heteroepitaxially grown silicon layers. It is shown that point defects with preferred positions in the lattice cell can be analysed if the temperature dependence of the Rutherford backscattering minimum yield is measured. Under special conditions, the analysis of crystals containing different kinds of defects is also possible. This is shown e.g. for a heteroepitaxially grown silicon layer with stacking faults, dislocations and twin lamellae.
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