Abstract
We have achieved deep-level-free Al0.22Ga0.78As epitaxial layers using low selenium (Se) doping (8.4×1016 cm−3) grown by metalorganic chemical vapor deposition (MOCVD). Deep levels in various Al0.22Ga0.78As layers grown on GaAs substrates were measured by deep-level transient spectroscopy. We have found that the commonly observed oxygen contamination-related deep levels at EC−0.53 and 0.70 eV and germanium-related level at EC−0.30 eV in MOCVD-grown Al0.22Ga0.78As can be eliminated by Se doping. In addition, a deep hole level located at EV+0.65 eV was found in highly Se-doped Al0.22Ga0.78As epilayers. We suggest that low Se doping (<2×1017 cm−3) produces a passivation effect and then deactivates other deep levels in Al0.22Ga0.78As.
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