Deep-level charge state control: a novel method for optical modulation in silicon waveguides

Abstract

In this paper we will describe the fabrication and characterization of passive waveguides which exploit the phenomenon of variable charge state mediation of deep-levels in silicon to vary optical absorption. Silicon waveguides are doped with either thallium or indium and co-doped with phosphorus. Optical absorption is reduced s phosphorus doping is increased. These results suggest a novel method of modulation via charge-state control of the deep-level.