Abstract
Vertical GaN-based devices offer the possibility to overcome several limitations of lateral high-electron mobility transistors (HEMTs). Since the electric field peaks in vertical transistors occur within the bulk instead of the surface, they are expected to be less susceptible to trapping and the associated reduction in dynamic performance. In this presentation, the deep-level trapping behavior of GaN-on-GaN current aperture vertical electron transistors (CAVETs) is characterized by means of current transient measurements and compared to AlGaN/GaN HEMTs fabricated on the same substrate.
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