Abstract
A new lithography system to fabricate high-aspect-ratio 3D microstructures was developed at the NewSUBARU synchrotron radiation facility (University of Hyogo, Japan). The X-ray beam generated by this system has high parallelism (horizontal and vertical divergence angles of 278 µrad and 14 µrad, respectively) and high photon flux (31 mW mm-2 at a beam current of 300 mA). The high photon flux and exposure area of the system were validated and a beam-scan method for a large exposure area with a uniform dose distribution has been proposed. In addition, the deep X-ray lithography performance was characterized using a conventional photosensitive material and the synchrotron-radiation-induced direct etching of polytetrafluoroethylene (PTFE) was demonstrated. An enlargement of the microfabrication area up to 100 mm × 100 mm while contemporarily ensuring high uniformity was achieved.
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