Deep void formation mechanism in Si(100) during its carbonization reaction with C 2H 2

Abstract

Deep silicon voids, located several hundreds of nm below the Si–SiC interface, were observed in Si(100) crystal after its reaction with C 2H 2 at 1200 °C. Interface voids are commonly observed during the reaction between Si and carbohydrides, but the proposed mechanisms for the interface voids cannot explain the appearance of the deep Si voids. Based on the experimental results, a formation mechanism for the deep voids is proposed in this letter. The proposed mechanism identifies carbon diffusion into the Si crystal as the initial cause and makes a relationship to the fast cooling during the employed rapid-thermal processing.