Abstract
Herein, we develop a ferroelectric/semiconducting heterostructure for deep UV-Vis photo detection as a new approach to enhance the photocurrent by introducing the polarization-dependent interfacial coupling effect. The deep UV-Vis photo detection efficiency of the heterostructure device is improved as compared with BaTiO3 and ZnO devices. The polarization-dependent interfacial coupling effect has been demonstrated by resistive switching and piezoresponse force microscopy study. The present work provides an efficient and novel way in designing highly efficient ferroelectric-based photodetector and new optoelectronic memory devices.
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