Deep UV patterning of monolayers of crystalline S layer protein on silicon surfaces

Abstract

The recrystallization of S layer proteins from Bacillus sphaericus CCM2177 on untreated silicon wafers into monolayers and their patterning by deep UV excimer laser radiation (ArF (λ = 193 nm) and KrF (λ = 248 nm)) is described. The S layer lattice was completely removed by ArF radiation with a dosage of about 200 mJ cm −2. Exposure to KrF radiation showed that the S layer was only carbonized but not removed even after increasing the dosage up to ten laser pulses (about 350 mJ cm −2 per pulse). Interference patterns in the S layer obtained when it was exposed to ArF radiation showed that the mask had not been in direct contact with the S layer owing to a thin interediate water layer. The application potential of patterned S layer lattices as immobilization matrices for binding functional molecules and as supporting layers for biomimetic membranes is discussed.