Abstract
We have patterned polymethyl methacrylate (PMMA) resist by exposing it to thefifth harmonic (213 nm) of an Nd:YAG source through metalized apertures incontact with the resist. Interference patterns with both near- and far-field originswere observed. In order to test the contrast and uniformity of exposure, wedeposited germanium onto developed areas to form arrays with feature sizes of∼200 nm. We present a straightforward model for interference effects generated in our process,and discuss opportunities for direct-write lithography through single apertures.
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