Abstract
We report the structural, electrical, and optical properties of deep UV light emitting diodes (LEDs) grown by gas source molecular beam epitaxy with ammonia on sapphire and AlN/sapphire template substrates. AlN/sapphire substrates were grown by stress controlled hydride vapor phase epitaxy (HVPE). LEDs based on n- and p-type AlN/AlxGa1−xN (0.05 ≤ x ≤ 0.08) superlattices are demonstrated operating to wavelengths as short as 250 nm. We report a significant enhancement in the cathodoluminescence intensities (by factor of ∼100) and photoluminescence lifetimes in the AlxGa1−xN/AlyGa1−yN superlattices consisting of well material grown in the three dimensional mode. We interpret these observations in terms of formation of quantum well/quantum dot active regions.
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