Abstract
Although inorganic resists are characterized by high contrast and resolution, they have traditionally suffered from poor sensitivity. We have investigated the use of a rare-gas halide excimer laser operating at λ = 249 nm to expose the inorganic resist Ag <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> Se/GeSe <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> . Well-controlled lines and spaces, each of 0.5-µm width, were contact printed using a chromium-on-quartz mask. By increasing the peak dose rate to about 520 kW/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> , we found that the required dose could be lowered from 130 to 5.2 mJ/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> ; this sensitivity is a factor of 250 better than that obtained with exposures at λ = 436 nm and low power densities. The reciprocity failure at these high flux rates can be explained by a locally induced temperature rise.
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