Abstract
Deep ultraviolet (UV) emission at 260 nm has been obtained from high Al content AlGaN/AlN multi-quantum well (MQW) structures by plasma-assisted molecular beam epitaxy (PA-MBE) on AlN template on sapphire substrates. The effect of III/V ratio and growth temperature on structural and optical properties of AlGaN was studied. It was observed that Al content in AlGaN material increased with increasing Al flux ratio or growth temperature. By altering growth conditions, AlGaN with high Al content of 47–80% was obtained. Further studies indicate that AlGaN layers have excellent surface morphology and optical properties grown in slightly metal-rich condition. As for AlGaN/AlN MQW, the emission wavelength was tuned by controlling the thickness of AlGaN quantum well, and deep ultraviolet emission below up to 260 nm was obtained from AlGaN (2.4 nm)/AlN(6.9 nm) MQW at room temperature.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
