Deep Ultraviolet Lithography of Monolayer Films with Selective Electroless Metallization

Abstract

A top surface imaging approach for the fabrication of submicron features on solid substrates has been developed. A monolayer film is exposed to patterned deep ultraviolet radiation, then selectively metallized using electroless deposition such that a thin metal layer (200–400 Å) is deposited only in the unexposed areas. The film/metal assembly is a highly effective mask for reactive ion etching which can subsequently be stripped from the substrate after feature definition. Features with 0.3 μm line width in polysilicon and working transistor test structures have been produced using this process.