Abstract
The deep ultraviolet detecting property of AlxZn1−xO (AZO) alloy thin film as photocathode layer was investigated. This AZO thin film was deposited via RF magnetron sputtering using a ceramic target, in which the concentration of Al was about 30at%. UV/dark contrast nearly three orders of magnitude has been achieved by using it in a simply fabricated photodetector, under 254nm UV illumination with power of 0.5mW/cm2 and bias of 80V. The photocurrent can be generated even without external electric field after illumination and come to saturation when the bias reaches 80V. Conventional UV emission peak around 380nm in photoluminescence spectra of ZnO is absent in the AZO thin film. Optical band gap of the AZO thin film is estimated to be 4.41eV and corresponding cutoff wavelength is 281nm. Negative surface potential of this thin film that enables high emitting efficiency is detected using Kelvin probe microscope, due to the elimination of surface barrier.
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