Abstract
Deep ultraviolet Al0.75Ga0.25N metal-semiconductor-metal photodetectors with high Al concentration have been demonstrated. A metal-organic chemical vapor deposition grown high quality Al0.75Ga0.25N layer was used as a template. Spectral responsivity, current-voltage, optical transmission, and noise measurements were carried out. The photodetectors exhibited a 229nm cutoff wavelength and a peak responsivity of 0.53A∕W at 222nm. Some 100×100μm2 devices have shown a dark current density of 5.79×10−10A∕cm2 under 50V bias. An ultraviolet-visible rejection ratio of seven orders of magnitude was obtained from the fabricated devices.
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