Abstract
Deep-level transient spectroscopy has been performed on Si-doped GaAs layers grown by molecular-beam epitaxy at substrate temperatures of 400–450 °C. The λ effect is taken into account and overlapping peaks are analyzed numerically. An 0.65 eV electron trap of concentration 2×1016 cm−3 is believed to be related to the AsGa-associated 0.65 eV Hall-effect center, and also to the trap EB4 found in electron-irradiated GaAs.
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