Deep traps in metal–insulator–chemically vapor-deposited amorphous SiNx diodes

Abstract

The dependence of capacitance of chemically vapor-deposited (CVD) amorphous SiN0.2 metal–insulator–semiconductor (MIS) diodes on frequency and temperature is measured and discussed. The results show that the MIS diode includes slow states and fast states. The response time of slow states is 2.4×10−9 exp(−0.6 eV/kBT) s above 130 °C. The fast states fully respond to 95 Hz at 130 °C. It cannot be distinguished whether these states originate from the interface states or the a-SiN0.2 gap states. The densities are evaluated to be 6×1017 cm−3 eV−1 (fast states) and 6×1018 to 2×1019 cm−3 eV−1 (slow states) as the CVD a-SiN0.2 gap states, or 6.9×1011 cm−2 eV−1 (fast states) and 6.2×1012 to 1.2×1013 cm−3 eV−1 (slow states) as the interface states.