Abstract
We investigated the current collapse in AlGaN/GaN MISHFETs after negative gate bias by observing the spectral photo-responsive drain current. The photons of 2.25 eV were the most effective photon energy to excite the electrons trapped by the deep levels, and the energy was attributed to the current collapse induced by the negative gate bias. This trap deep energy might be related to the Ga vacancy in GaN bulk layer. The current collapse in AlGaN/GaN MISHFET was more significant for the wider gate-drain spacing.
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