Abstract
The AIGaInAs quaternary alloy represents an alternative to GaInAs as the channel material of heterojunction field effect transistors leading to a reduced impact ionisation effect. The conduction band offset of the AIInAs/GaAlInAs heterointerface is experimentally determined by current transport investigation on Schottky diodes. The simulation of the forward current shows that the thermionic field emission can become the dominant conduction mechanism in these heterostructures when the thickness of the AlInAs barrier is decreased. One main electron trap is observed by deep level transient spectroscopy in the GaAIInAs layer, which probably has the same origin as the dominant defect E3 in AIInAs.
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