Deep submicron pattern transfer using high density plasma etching and nanochannel glass replica technology

Abstract

Nanochannel glass (NCG)-based lithography has been used in conjunction with electron cyclotron resonance microwave plasma reactive ion etching (ECR-RIE) to demonstrate deep submicron features in HgCdTe alloys and InAs/GaSb heterostructures. NCG-based lithography is attractive as a massively parallel, low cost technology for nanometer-scale patterning. Samples patterned using thin-film metal replicas of NCG and methyl-radical-based ECR-RIE demonstrate a high degree of uniformity and fidelity with individual features having nearly vertical sidewalls and aspect ratios of up to 2 to 1. Dot arrays with features as small as 250 nm (and with packing densities of ∼1010/cm2) and anti-dot arrays with features as small as 600 nm have been realized.