Abstract
Data are presented on deep-oxide planar buried-heterostructure AlGaAs–GaAs quantum well heterostructure laser diodes fabricated using a self-aligned process that combines native oxide and impurity-induced layer disordering (IILD) technologies. Silicon IILD intermixes the waveguide layers on either side of an active area stripe and allows ‘‘wet’’ oxidation to penetrate and create a low-index (n∼1.7) deep-oxide structure for electrical and optical confinement. Continuous-wave (cw) threshold currents of ∼3.4 mA are measured for ∼3.5-μm-wide active regions (L∼250 μm), with maximum cw output powers greater than 29 mW/facet and external differential quantum efficiencies as high as 70% (300 K, uncoated facets).
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