Abstract

We present deep ion implantation technology to fabricate the GaAs microstructures for microelectromechanical systems applications. 630 keV and 4 MeV nitrogen ions were used to implant deeply into an n-type GaAs substrate with doses of 2×1014 and 1×1015 cm−2, respectively. The resistivity and I/V characteristics of implanted n-GaAs have been investigated as a function of the annealing temperature. The results demonstrate that the implanted n-GaAs surface layer annealed at 600 °C has the highest resistivity and maximum breakdown voltage. This layer is a semi-insulating layer and has a thickness of 1 and 2.5 μm for implantation with 630 keV and 4 MeV nitrogen ions, respectively. Deep-level transient spectroscopy measurement reveals that the EL2 trap contributes to the formation of semi-insulating GaAs layers. Rutherford backscattering measurements show that there is no significant crystalline damage in the nitrogen implanted GaAs layer. A pulsed electrochemical etching process has been developed to selectively remove n-GaAs, leaving the top patterned semi-insulating GaAs layer as mechanical microstructures. Using this technique, GaAs microstructures, such as cantilevers and cross bridges, have been successfully fabricated.

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