Abstract
A possibility of fabricating an all-perovskite field-effect transistor with a deep conductance modulation is shown. A 5– 10 nm thick La 2− x Sr x CuO 4 (LSCO) film was used as a channel, and a ferroelectric gate insulator was 100 nm thick (Pb 0.95La 0.05)(Zr 0.2Ti 0.8)O 3 (PLZT). The channel conductance modulation in the studied transistors was ∼70%, much higher than that reported up to now and could be sufficient for reliable readout of data stored. Relatively low carrier density, small thickness, and rather high surface quality of the channel have provided the penetration of the electric field into the major part of the channel and deep conductance modulation.
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