Abstract
Deep levels have been identified and characterized in undoped Si1−xGex alloys grown on silicon substrates by gas-source molecular beam epitaxy. Hole traps in the p-type layers have activation energies ranging from 0.029–0.45 eV and capture cross sections (σ∞ ranging from 10−9 to 10−20 cm2. Possible origins of these centers are discussed.
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