Abstract
Deep-level transient spectroscopy (DLTS) has been used to investigate and characterize deep-level defects in nitrogen-doped p-type ZnSe layers grown by molecular beam epitaxy on GaAs substrates. At least three prominent levels, H1, H3 and H4, are found in the lower-half bandgap with thermal activation energies 0.31 eV, 0.63 eV and 0.94 - 0.99 eV respectively. Comparison of their characteristics with the two previous reports shows that, with the exception of H3, these are new levels. In addition, some evidence is presented for three minority carrier (electron) peaks for the first time.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
