Abstract
Electron and hole traps in MOCVD GaAs and the interface were investigated by Deep Level Transient Spectroscopy (DLTS and Photo-Excited DLTS. GaAs was grown under various conditions, different As/Ga mol fractions, and S-and-non-doping. Five electron traps and three holes traps were detected. A main electron trap is ET1MO, which is the same level as EL-2 = EB2 in VPE materials. Its density is dicussed as a function of an Ga/As mol fraction. A commonly observed hole trap is HT3MO, which turns out to be “Fe”. The emission rate was deduced as a fucntion of reciprocal temperature for each level and compared with other data so far published.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
