Abstract
Deep levels were detected in Fe-doped n- and p-type 4H-SiC using deep level transient spectroscopy (DLTS). One defect level (EC–0.39 eV) was detected in n-type material. DLTS spectra of p-type 4H-SiC show two dominant peaks (EV + 0.97 eV and EV + 1.46 eV). Secondary ion mass spectrometry measurements confirm the presence of Fe in both n- and p-type 4H-SiC epitaxial layers. The majority of the capture process for Fe1, Fe2, and Fe3 is multi-phonon emission assisted. These three detected peaks are suggested to be related to Fe.
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