Abstract
Electron trapping levels in indium selenide single crystals doped with iodine have been investigated by deep-level-transient spectroscopy measurements. Two traps located at about 0.60 and 0.21 eV have been detected below the conduction band and the corresponding thermal capture cross sections have been evaluated. The first trap is present both in undoped and doped InSe crystals, whereas the second trap appears in doped samples.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
