Abstract
Deep-level transient spectroscopy measurements have been carried out to investigate the behavior of the deep levels existing in In-doped n-CdTe grown by molecular beam epitaxy on nominally undoped p-CdTe (211) B-orientation substrates. One electron-trap of the as-grown In-doped CdTe epilayer was observed, and the trap originated from complexes of Cd vacancies and In impurities. After the In-doped CdTe epilayer was annealed, one new trap at E c − 0.49 eV was observed, and the deep level was related to the Te vacancies or the Cd interstitials. These results indicate that the electron deep trap in In-doped CdTe epilayers is affected remarkably by annealing and that the variation of the position of the deep level due to thermal treatment is a significant problem for electronic devices.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
