Abstract
AbstractTitanium was ion implanted at 180 KeV into p-type silicon to form a buried TiSi2 layer. DLTS measurements of n+p junctions have shown two minority carrier traps at Ec − Et = 0.24 and 0.51 eV. Also, a single majority trap at Ev + Et = 0.41 eV was observed. The concentrations of these levels were calculated to be approximately 1013 cm−3. DLTS measurements of low-fluence 50 KeV Ti implantations using Schottky diodes showed four levels dependent on silcon type.
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