Abstract
Deep levels induced by MeV-proton irradiation in n−(ν) region of Si p-ν-n diodes were investigated by photocapacitance method under constant capacitance condition. Electrical property, dosage dependence, spatial distribution, and annealing behavior of the deep levels were studied. Carrier lifetime reduction in pin diodes by the deep level was examined by current–voltage characteristics and impedance measurements. From proton dosage dependence and annealing effect, the decreasing behavior of minority carrier lifetime with increasing deep level density was revealed.
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