Abstract

Deep levels in p-type GaAs have direct impact on the performance of many devices, such as the hetero-junction transistor (HBT). We have studied the influences of dopant elements (Mg or Zn), growth temperature, and doping concentration on the characteristics of the deep levels in p-GaAs via n+-p GaAs homojunctions grown by metalorganic vapor phase epitaxy (MOVPE). Over various growth conditions, four hole traps and an electron trap with activation energies in the range of 0.18—0.79 eV were measured in GaAs: Mg. Only a single hole trap, which is also detected in GaAs: Mg, has been measured in GaAs: Zn. The characteristics of the deep levels presented in GaAs: Mg depend mainly on the doping concentration of Mg. The possible origins of several of these traps have been identified. Overall, the total concentration in the GaAs: Mg decreases rapidly with doping concentration for p>4×1017 cm−3. Upon comparison, the total deep trap concentration in GaAs: Mg is always greater than in GaAs: Zn, indicating that Zn is a preferred p-type dopant for MOVPE GaAs.

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