Abstract
The work reported here was performed in order to establish whether or not complex defects like the D-X center can be present in InAlAs. Dominant deep electron and hole traps in lattice-matched In0.52Al0.48As/InP have been identified and characterized. The traps have activation energies ranging from 0.25 to 0.95 eV. The electron traps have very large capture cross-sections,~10−12-10−11 cm2, similar to attractive centers. The lattice-matched samples do not show any persistent photoconductivity effects at low temperatures. In strained In1−xAlxAs with 0.48 <x ≤ 0.57, an electron trap with a thermal ionization energy of 0.35 eV, a strong dependence of its concentration on donor doping and very small thermal capture cross-section, 1018 cm2, is identified. These samples exhibit persistent photoconductivity. We believe this trap is similar to the D-X center commonly observed in AlxGa1−xAs forx ≥ 0.28.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
