Abstract
The characterization of deep levels generated by donor dopants (DX centers) requires reliable deep level transient spectroscopy (DLTS) data. Because in AlGaAs and GaAsP the electron thermal emission from DX centers produces strong nonexponential capacitance transients, blind DLTS analysis may lead to erroneous trap parameter determinations. In this work the DLTS sampling conditions to be used for proper DX center characterization are examined. It is concluded that, only under constant tb/ta windowing ratios, self-consistent trap parameters are obtained.
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