Abstract
We have studied capacitance mode Deep Level Transient Spectroscopy (DLTS) of five 4H-SiC Schottky diode and PiN diode designs. Comparing with previous DLTS studies, we have identified four traps levels, Z1/2, EH1, EH3 and EH5. Additionally, a new trap level, EH1, is prominent in blanket Al+ and B+ high-energy implanted samples but less so in mask-implanted samples. Al+ implantation increases EH3 (associated with silicon vacancy) and EH5, while B+ implantation significantly reduces EH3. The Z1/2 peak (associated with carbon vacancy) is reduced to very low levels after B+ and Al+ implantation.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
