Abstract
We fabricated high-efficiency thin-film CuIn 1− x Ga x Se 2-based solar cells from solution-based electroplated, auto-plated precursors and by physical vapor deposition. The devices were characterized by deep-level transient spectroscopy (DLTS). DLTS recorded a new electron trap level in addition to two hole (majority-carrier) trap levels and one electron (minority-carrier) trap level for low-efficiency devices. We believe that the additional electron trap level is an effective recombination center, which leads to the poor performance of the device.
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