Deep level transient spectroscopy characterisation of Xe irradiated GaN

Abstract

In this study n-type GaN was subjected to irradiation. This irradiation was performed by Xe+26 of 167MeV to a fluence of 1010 cm−2 at room temperature. Irradiation resulted in an increase in the reverse current by about 10 orders of magnitude. This has been explained by the generation/recombination centers formed during irradiation. Using the deep level transient spectroscopy (DLTS) technique, two defects were identified after irradiation with activation energies of 0.07 and 0.48eV below the conduction band. These defects have similar signatures to other defects observed after electron irradiation, thermal annealing and In doping.