Abstract
The recharging of quantum confinement levels in SiGe quantum wells (QWs) was studied by charge deep-level transient spectroscopy (Q-DLTS) for Si/SiGe/Si structures with different Ge contents in the SiGe layer. The set of levels were observed as the different slopes in the Arrhenius plots for the same Q-DLTS peak in different temperature ranges. These activation energies were compared to the energies of quantum confinement levels in the QW calculated in frames of six-band model taking into account spin-orbit interaction and attributed to a thermally activated tunneling of holes from the SiGe QW.
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