Deep level properties of erbium implanted epitaxially grown SiGe

Abstract

We have used deep-level transient spectroscopy (DLTS) in an investigation of the electronic properties of defects introduced in n-Si 0.96Ge 0.04 during 180 keV erbium ion implantation (fluence= 1 × 10 10 cm −2 ). Five defects with discrete energy levels, ranging from 0.17 to 0.59 eV below the conduction band, were introduced during Er ion implantation. These defects are compared to those introduced during He-ion etching and alpha particle irradiation. By comparing the DLTS spectra and DLTS signatures, it was noted that certain defects (Eer3, Eer4 and Eer5) are only observed in the Er implanted SiGe. Photoluminescence in the 1.54 μm region due to the erbium implantation in Si 0.96Ge 0.04 was observed after a thermal treatment at 900°C for 30 s.