Abstract
We studied the emissive pits in InGaN films grown on compressive and strain-free GaN underlying layers. Pit density decreased with the full width at half maximum of ω(0002) of InGaN. The films grew on compressive and strain-free GaN underlying layers with spiral and step-flow modes, respectively. Carbon impurities accumulated inside the pits. Comparison of cathodoluminescence inside the pits and steady-state photocapacitance spectra showed that the energy level of the carbon impurities appeared at ∼2.8 eV below the conduction band (Ec) for both types of pits. Deep-level defects at Ec −2.4 eV resulting in green fluorescence emission were considered to originate from pits related to screw dislocations.
Highlights
Indium gallium nitride alloy (InxGa1 xN) is an important material in light-emitting diodes (LEDs) and laser diodes with blue, green, and various other emission colors
Deep-level defects related to the emissive pits in thick InGaN films on GaN template and bulk substrates
The columnar growth mode is suppressed at a low growth rate,[4,5] thick InGaN films often grow with a spiral growth mode, and contain pits with a diameter of several micrometers in their surface
Summary
Indium gallium nitride alloy (InxGa1 xN) is an important material in light-emitting diodes (LEDs) and laser diodes with blue, green, and various other emission colors. Deep-level defects related to the emissive pits in thick InGaN films on GaN template and bulk substrates
Sign-in/Register to view highlights & summary Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
