Abstract
The physical and chemical nature of several defects involved in metal–oxide–silicon (MOS) device instabilities have become fairly well understood through studies involving electron paramagnetic resonance (EPR). Recent EPR studies suggest that some of these defects play important roles in the negative bias temperature instability (NBTI). This paper reviews recent NBTI EPR studies as well as earlier EPR studies dealing with other MOS instability problems.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
