Abstract
Deep level transient spectroscopy and capacitance voltage measurements of the defect introduction rates and carrier removal rates for 2 MeV proton and 2 MeV alpha particle irradiations in p-type InP have been performed. The carrier removal rate for 2 MeV protons was 6500 cm−1 and for 2 MeV alpha particles was 73 400 cm−1, or 12 times higher. The defect introduction rates for H4, the predominant radiation induced defect in p-type InP, were 229 per 2 MeV proton and 9000 per 2 MeV alpha particle, or 39 times higher for alpha irradiation. The very large rates of carrier removal and high defect introduction rates in the latter case may limit the usefulness of InP in a radiation environment containing high energy alpha particles.
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