Abstract
The influence of deep levels on the minority-carrier lifetime and relative cathodoluminescent efficiency of undoped GaP has been investigated. Evidence that both these parameters are deep-level controlled is presented. The dominant center was detected by thermal capture and emission of minority carriers optically injected into the depletion layer of Schottky barriers. This center was found to have a depth of ET−EV=0.75 eV and a hole capture cross section of approximately 4×10−14 cm2.
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