Abstract
Metasurfaces analogues of Fano resonances provide a powerful platform for high sensitivity sensing, nonlinear optics, and light manipulation. However, previous Fano-resonant metasurfaces usually are not compatible with silicon complementary metal-oxide semiconductor circuits due to their hybrid material structures and large non-radiative loss. Herein, we theoretically demonstrate a silicon-on-insulator metasurface (SOIM) enhancing Fano resonances by using a tandem neural network design. Multiple Fano resonances with high Q-factor have been observed in the symmetry-breaking SOIM. The Fano-resonant mechanism of the SOIM is analyzed. Additionally, the spectral features of the Fano-resonant SOIM as a function of the symmetry tuning factor of the double silicon nanobars and the environment refractive index are also investigated. The result shows that the Fano-resonant SOIM as a methanol sensor with a sensitivity of 310 nm/RIU can achieve an overall figure of merit of 195 in the near-infrared spectral regime. The designed Fano-resonant SOIM shows enormous potential applications in highly sensitive sensors and light-matter interaction enhancement.
Highlights
FANO resonance was firstly proposed by Ugo Fano to explain the phenomena of asymmetric line shape of the absorption spectra in the experiment of noble gasses [1]
While our design is based on the SOI platform, which has the advantage of the scalability and standardization, for silicon complementary metal-oxide semiconductor (CMOS) (Si-COMS) circuits [18]
The predicted geometry parameters (Px, Py, W, L, GT, and Gm, as shown in Fig. 4(b)) of silicon-on-insulator metasurface (SOIM) were obtained via deep neural networks (DNNs), which correspond to our input target spectra with the high Q-factor of 1000
Summary
FANO resonance was firstly proposed by Ugo Fano to explain the phenomena of asymmetric line shape of the absorption spectra in the experiment of noble gasses [1]. The inverse design based on neural networks shows enormous potential applications in the design and engineering of materials [22], [23], structures [24], [25], and devices [26], [27]. Deep neural networks (DNNs) can save the time and cost of the device design by accelerating the optimization process. We theoretically propose and demonstrate a silicon-on-insulator metasurface (SOIM) by using a deep neural. Based on the deep learning-assisted optimization, multiple Fano resonances with high Q-factor have been observed in symmetry-breaking SOIM. The results suggest that the designed SOIM shows enormous potential applications in developing highly sensitive sensors and nonlinear optics devices
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